Reliability modeling for ultrathin gate oxides subject to logistic degradation processes with random onset time

Quality and Reliability Engineering International

Volumn 29, Issue 5, 2013, Pages 709-718

  Peng, Hao ^a   Feng, Qianmei ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF HOUSTON   (United States)

Author keywords

lifetime distribution; logistic degradation process; lognormal distribution; random onset time; ultrathin gate oxides

Indexed keywords

DEGRADATION PROCESS; LIFE-TIME DISTRIBUTION; LOG-NORMAL DISTRIBUTION; ONSET-TIME; ULTRA THIN GATE OXIDE;

COMPUTER SIMULATION; DEGRADATION; GATES (TRANSISTOR); MOS DEVICES;

WEIBULL DISTRIBUTION;

EID: 84880828698     PISSN: 07488017     EISSN: 10991638     Source Type: Journal    
DOI: 10.1002/qre.1421     Document Type: Article

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