Oxide conductivity increase during the progressive-breakdown of SiO 2 gate oxides observed with C-AFM

Microelectronics Reliability

Volumn 43, Issue 9-11, 2003, Pages 1501-1505

  Porti, M ^a   Nafria M ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; GATES (TRANSISTOR); INTEGRATED CIRCUITS; SILICA;

SOFT BREAKDOWN (SBD);

ELECTRIC BREAKDOWN;

EID: 0042193322     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00266-X     Document Type: Conference Paper

References (8)

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3. Weir BE, Silverman PJ, Monroe D, Krisch KS, Alam MA, Alers GB, Sorsch TW, Timp GL, Baumann F, Liu CT, Ma Y and Hwang D. Ultra-thin gate dielectrics: they break down, but do they fail ?, IEDM Tech. Digest., 1997, p. 73-76.
4. Kaczer B, Degraeve R, Rasras M, Van de Mieroop K, Rousell PJ and Groeseneken G. Impact of MOSFET gate oxide breakdown on digital circuit operation and realiability, IEEE Trans. Elect. Dev., 2002; 49(3):500-506.
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6. Monsieur F, Vincent E, Roy D, Bruyere S, Vildegil JC, Pananakakis G, Ghibaudo G. A Thorough Investigation of Progressive Breakdown in Ultra-thin Oxides. Physical Understanding and Application for Industrial Reliability Assessment, Proceedings of the International Reliability Physics Symposium, 2002, p. 45-54.
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8. 2 films and MOS devices with a Conductive Atomic Force Microscope, Proceedings of the International Reliability Physics Symposium, 2002, p. 380-386.