Accurate assessment of the time-to-failure of hyper-thin gate oxides subjected to constant electrical stress using a logistic-type model

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 166-169

  Palumbo, F ^a   Miranda, E ^b   Lombardo, S ^a  

^a CNR IMM   (Italy)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Gate Oxide Reliability; Logistic Equation; Progressive Breakdown

Indexed keywords

CAPACITORS; DIFFERENTIAL EQUATIONS; ELECTRIC POTENTIAL; FEEDBACK; LEAKAGE CURRENTS; NETWORKS (CIRCUITS); SPURIOUS SIGNAL NOISE; WEIBULL DISTRIBUTION;

CURRENT-TIME CHARACTERISTICS; GATE OXIDE RELIABILITY; LOGISTIC EQUATIONS; PROGRESSIVE BREAKDOWN;

GATES (TRANSISTOR);

EID: 19944417286     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.062     Document Type: Conference Paper

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