Statistics of progressive breakdown in ultra-thin oxides

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 24-28

  Linder, B P ^a   Stathis, J H ^a  

^a IBM RESEARCH   (United States)

Author keywords

Breakdown statistics; CMOS; Dielectric breakdown; Oxide breakdown; Oxide reliability

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; FAILURE ANALYSIS; LEAKAGE CURRENTS; MONTE CARLO METHODS; PROBABILITY; RELIABILITY; STATISTICAL METHODS; SUBSTRATES;

BREAKDOWN STATISTICS; DIELECTRIC BREAKDOWN; OXIDE BREAKDOWN; OXIDE RELIABILITY;

CMOS INTEGRATED CIRCUITS;

EID: 1642587670     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.12.010     Document Type: Conference Paper

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