Stochastic modeling of progressive breakdown in ultrathin SiO2 films

Applied Physics Letters

Volumn 83, Issue 24, 2003, Pages 5014-5016

  Miranda, E ^a,b   Cester, A ^c   Paccagnella, A ^c  

^a UNIVERSIDAD DE BUENOS AIRES   (Argentina)

^b Facultad de Ciencias Naturales e Instituto M Lillo   (Argentina)

^c UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DIFFERENTIAL EQUATIONS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOS CAPACITORS; RANDOM PROCESSES; SEMICONDUCTOR DEVICE STRUCTURES; SILICA;

BREAKDOWN DYNAMICS; PROGRESSIVE BREAKDOWN; STOCHASTIC DIFFERENTIAL EQUATION;

ULTRATHIN FILMS;

EID: 0346503157     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1634372     Document Type: Article

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