Integration of 28nm MJT for 8∼16Gb level MRAM with full investigation of thermal stability

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2011, Pages 210-211

  Kim, Y ^a   Oh, S C ^a   Lim, W C ^a   Kim, J H ^a   Kim, W J ^a   Jeong, J H ^a   Shin, H J ^a   Kim, K W ^a   Kim, K S ^a   Park, J H ^a   Park, S H ^a   Kwon, H ^a   Ah, K H ^a   Lee, J E ^a   Park, S O ^a   Choi, S ^a   Kang, H K ^a   Chung, C ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

16Gb; 28nm; MRAM; thermal stability

Indexed keywords

16GB; 28NM; FREE LAYERS; MRAM;

ASPECT RATIO;

THERMODYNAMIC STABILITY;

EID: 80052657578     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)

1. S. C. Oh, S. Park, A. Manchon, J. Han, H. Lee, J. E. Lee., et al., "Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions" Nature Phys. Vol. 5, pp. 898-902, 2009.