Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy

IEEE Magnetics Letters

Volumn 2, Issue , 2011, Pages

  Nowak, J J ^a   Robertazzi, R P ^a   Sun, J Z ^a   Hu, G ^a   Abraham, David W ^a   Trouilloud, P L ^a   Brown, S ^a   Gaidis, M C ^a   O'Sullivan, E J ^a   Gallagher, W J ^a   Worledge, D C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

magnetic random access memory (MRAM); magnetic switching.; Spin electronics; spin transfer torque

Indexed keywords

ERROR FREE OPERATIONS; MAGNETIC RANDOM ACCESS MEMORIES; MAGNETIC SWITCHING; MAGNETIC TUNNEL JUNCTION; PERPENDICULAR MAGNETIC ANISOTROPY; ROOM TEMPERATURE; SPIN ELECTRONIC; SPIN TORQUE; SPIN TRANSFER TORQUE; TEST RESULTS; WAFER LEVEL;

BIT ERROR RATE; MAGNETIC STORAGE; MAGNETISM; MRAM DEVICES; RANDOM ACCESS STORAGE; TUNNEL JUNCTIONS;

MAGNETIC ANISOTROPY;

EID: 79959289342     PISSN: 1949307X     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMAG.2011.2155625     Document Type: Article

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