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Volumn 113, Issue 23, 2013, Pages

Dislocation impact on resistive switching in single-crystal SrTiO 3

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION FORMATION; ELECTRON CHANNELING CONTRASTS; FILAMENTARY CONDUCTION; HIGH DISLOCATION DENSITY; POSSIBLE MECHANISMS; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING DEVICES; VACANCY CONCENTRATION;

EID: 84880808912     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4811525     Document Type: Article
Times cited : (22)

References (28)
  • 2
    • 36049053305 scopus 로고
    • 10.1103/PhysRevLett.21.1450
    • S. R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968). 10.1103/PhysRevLett. 21.1450
    • (1968) Phys. Rev. Lett. , vol.21 , pp. 1450
    • Ovshinsky, S.R.1
  • 7
    • 0021093645 scopus 로고
    • 10.1016/0040-6090(83)90175-X
    • C. B. Greenberg, Thin Solid Films 110, 73 (1983). 10.1016/0040-6090(83) 90175-X
    • (1983) Thin Solid Films , vol.110 , pp. 73
    • Greenberg, C.B.1
  • 14


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.