Retraction notice to: “Structural, optical, and electrical properties of Schottky diodes based on undoped and cobalt-doped ZnO nanorods prepared by RF-magnetron sputtering”(Materials Science & Engineering B (2013) 178(16) (1048–1056)(S0921510713002250)(10.1016/j.mseb.2013.06.011));Structural, optical, and electrical properties of Schottky diodes based on undoped and cobalt-doped ZnO nanorods prepared by RF-magnetron sputtering

Materials Science and Engineering: B

Volumn 178, Issue 16, 2013, Pages 1048-1056

  Al Salman, Husam S ^a,b   Abdullah, M J ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

^b UNIVERSITY OF BASRAH   (Iraq)

Author keywords

Co doped; RF sputter; Shottky diode; Structural property; ZnO nanorods

Indexed keywords

COBALT; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; NANORODS; SCHOTTKY BARRIER DIODES; SILICON COMPOUNDS; THIN FILMS; ZINC OXIDE; ZINC SULFIDE;

CO-DOPED; CO-DOPED ZNO; COBALT-DOPED ZNO; R.F. MAGNETRON SPUTTERING; RF-SPUTTER; SCHOTTKY DIODES; SHOTTKY DIODE; SYNTHESISED; ZNO NANOROD; ZNO NANOSTRUCTURES;

DIODES;

EID: 84880731707     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2018.05.001     Document Type: Erratum

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