The dependence of barrier height on temperature for Pd Schottky contacts on ZnO

Physica B: Condensed Matter

Volumn 404, Issue 22, 2009, Pages 4402-4405

  Mtangi, W ^a   Auret, F D ^a   Nyamhere, C ^a   Janse van Rensburg, P J ^a   Chawanda, A ^a   Diale, M ^a   Nel, J M ^a   Meyer, W E ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

Barrier height; Capacitance; DLTS; Traps

Indexed keywords

BARRIER HEIGHT; BARRIER HEIGHTS; C-V MEASUREMENT; CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT VOLTAGE; DEFECT CONCENTRATIONS; DLTS; ENERGY LEVEL; FORWARD BIAS; I-V MEASUREMENTS; ROOM TEMPERATURE; SCHOTTKY CONTACTS; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; ZERO BIAS; ZNO;

CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON MOBILITY; LASERS; MASERS; NEGATIVE TEMPERATURE COEFFICIENT; PALLADIUM; SEMICONDUCTOR MATERIALS; TEMPERATURE; ZINC OXIDE;

SCHOTTKY BARRIER DIODES;

EID: 71749094875     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.09.022     Document Type: Article

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