Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

Materials Science and Engineering: B

Volumn 177, Issue 2, 2012, Pages 180-183

  Mtangi, W ^a   Auret, F D ^a   Chawanda, A ^a   Janse Van Rensburg, P J ^a   Coelho, S M M ^a   Nel, J M ^a   Diale, M ^a   Van Schalkwyk, L ^a   Nyamhere, C ^b  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

Author keywords

Barrier height; Depth profile; Pd ZnO Schottky; Surface conduction; Thermal annealing

Indexed keywords

ANNEALING; CAPACITANCE; ELECTRIC RESISTANCE; II-VI SEMICONDUCTORS; PALLADIUM; SINGLE CRYSTALS; ZINC OXIDE;

ANNEALING BEHAVIOR; ANNEALING TEMPERATURES; BARRIER HEIGHTS; CAPACITANCE VOLTAGE MEASUREMENTS; DEPTH-PROFILE; PD/ZNO SCHOTTKY; REVERSE CURRENTS; SCHOTTKY CONTACTS; SURFACE CONDUCTION; THERMAL-ANNEALING;

THERMIONIC EMISSION;

EID: 84855791113     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2011.10.003     Document Type: Article

References (24)

1. C. Coskun, D.C. Look, C.G. Farlow, and J.R. Sizelove Semicond. Sci. Technol. 19 2004 752
2. W. Mtangi, F.D. Auret, J.M. Nel, A. Chawanda, C. Nyamhere, and M. Diale Physica B 2011 10.1016/j.physb.2011.09.101
3. D.C. Look Superlattices Microstruct. 42 2007 284
4. G.H. Kassier, M. Hayes, and F.D. Auret J. Appl. Phys. 102 2007 014903
5. D.C. Look, H.L. Mosbacker, Y.M. Strzhemechny, and L.J. Brillson Superlattices Microstruct. 38 2005 406
6. G. Heiland J. Phys. Chem. Solids 6 1958 155
7. S.-H. Kim, H.-K. Kim, and T.-Y. Seong Appl. Phys. Lett. 86 2005 112101
8. Q.L. Gu, C.C. Ling, X.D. Chen, C.K. Cheng, A.M.C. Ng, C.D. Beling, S. Fung, A.B. Djurisic, and L.W. Lu Appl. Phys. Lett. 90 2007 122101
9. Y. Chen, F. Giang, L. Wang, C. Mo, Y. Pu, and W. Fang J. Cryst. Growth 268 2004 71
10. W. Mtangi, F.D. Auret, C. Nyamhere, P.J. Janse van Rensburg, A. Chawanda, M. Diale, J.M. Nel, and W.E. Meyer Physica B 404 2009 4402
11. R. Schifano, E.V. Monakhov, U. Grossner, and B.G. Svensson Appl. Phys. Lett. 91 2007 193507
12. D.C. Look Superlattices Microstruct. 42 2007 284
13. U. Ozgur J. Appl. Phys. 98 2005 41301
14. L.J. Mandalapu, F.X. Xiu, Z. Yang, and J.L. Liu J. Appl. Phys. 102 2007 023716
15. K. Ip, Y.W. Heo, K.H. Baik, D.P. Norton, S.J. Pearton, S. Kim, J.R. LaRoche, and F. Ren Appl. Phys. Lett. 84 2004 15
16. L.J. Brillson, H.L. Mosbacker, M.J. Hetzer, Y. Strzhemechny, D.C. Look, G. Cantwell, J. Zhang, and J.J. Song Appl. Surf. Sci. 254 2008 8000
17. G.M. Ali, and P. Chakrabarti Appl. Phys. Lett. 97 2010 031116
18. R. Schifano, E.V. Monakhov, B.G. Svensson, and S. Diplas Appl. Phys. Lett. 94 2009 132101
19. J.D. Wiley IEE Trans. Electron Devices ED-25 1978 11
20. H. von Wenckestern, M. Brandt, G. Zimmermann, J. Lenzner, H. Hochmuth, M. Lorenz, and M. Grundmann Mater. Res. Soc. Symp. Proc. 2007 957
21. O. Schmidt, P. Kiesel, C.G. van de Walle, J.M.N. Johnson, J. Nause, and G.H. Dohler J. Appl. Phys. 44 2005 7271
22. D.C. Oh, J.J. Kim, H. Makino, T. Hanada, M.W. Cho, T. Yao, and H.J. Ko Appl. Phys. Lett. 86 2005 042110
23. U. Grossner, S. Gabrielsen, T.M. Børseth, J. Grillenberger, A.Yu. Kuznetsov, and B.G. Svensson Appl. Phys. Lett. 85 2004 12
24. P. Klason, O. Nur, and M. Willander Nanotechnology 19 2008 475202