Improved thermal stability and electrical performance by using PEALD ultrathin Al2O3 film with Ta as Cu diffusion barrier on low k dielectrics

ECS Solid State Letters

Volumn 1, Issue 3, 2012, Pages

  Ding, Shao Feng ^a   Xie, Qi ^a   Chen, Fei ^a   Lu, Hai Sheng ^a   Deng, Shao Ren ^b   Deduytsche, David ^a   Detavernier, Christophe ^b   Qu, Xin Ping ^a  

^a FUDAN UNIVERSITY   (China)

^b GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CU DIFFUSION BARRIER; ELECTRICAL PERFORMANCE; K-VALUES; LOW K DIELECTRICS; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; ULTRA-THIN;

ALUMINUM; ATOMIC LAYER DEPOSITION; COPPER; DEPOSITION; DIFFUSION BARRIERS; THERMODYNAMIC STABILITY;

ULTRATHIN FILMS;

EID: 84880525482     PISSN: 21628742     EISSN: 21628750     Source Type: Journal    
DOI: 10.1149/2.006203ssl     Document Type: Article

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