Improvement of resistive switching performances in znlao film by embedding a thin ZnO buffer layer

ECS Solid State Letters

Volumn 2, Issue 9, 2013, Pages

  Xu, Dinglin ^a   Xiong, Ying ^a   Tang, Minghua ^a   Zeng, Baiwen ^a   Xiao, Yongguang ^a   Li, Jingqi ^a   Liu, Liu ^a   Yan, Shaoan ^a   Tang, Zhenhua ^a   Wang, Longhai ^b   Zhu, Xiaojian ^c   Li, Runwei ^c  

^a XIANGTAN UNIVERSITY   (China)

^b WUHAN INSTITUTE OF TECHNOLOGY   (China)

^c NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; CHEMICAL SOLUTION DEPOSITION METHOD; CONDUCTING FILAMENT; RESISTANCE STATE; RESISTIVE SWITCHING; SWITCHING VOLTAGES; ZNO; ZNO BUFFER LAYER;

BUFFER LAYERS; SWITCHING SYSTEMS;

ZINC OXIDE;

EID: 84880445958     PISSN: 21628742     EISSN: 21628750     Source Type: Journal    
DOI: 10.1149/2.002309ssl     Document Type: Article

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