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Electrochemical and Solid-State Letters

Volumn 15, Issue 4, 2012, Pages

Improvement of resistive switching stability of HfO 2 films with Al doping by atomic layer deposition

(6) Peng, Ching Shiang a Chang, Wen Yuan b Lee, Yi Hsuan a Lin, Ming Ho a Chen, Frederick c Tsai, Ming Jinn c

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b NATIONAL TAIWAN UNIVERSITY (Taiwan)

c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPING; DATA STORAGE CAPABILITY; DOPING EFFECTS; HIGH-RESISTANCE STATE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; TEMPERATURE DEPENDENT; VACANCY FORMATION ENERGIES;

ACTIVATION ENERGY; ARRHENIUS PLOTS; ATOMIC LAYER DEPOSITION; HAFNIUM; HAFNIUM OXIDES; SEMICONDUCTOR DOPING; SWITCHING SYSTEMS;

ALUMINUM;

EID: 84863121715 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/2.011204esl Document Type: Article

Times cited : (60)

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