-
2
-
-
0343627605
-
Opto-electronic characterization of thin-film crystalline silicon solar cells grown from metal solutions
-
S.J. Robinson, G.F. Zheng, R. Bergmann, W. Zhang, Z. Shi, M.A. Green, Opto-electronic characterization of thin-film crystalline silicon solar cells grown from metal solutions, in: Proceedings of the 12th European Photovoltaic Solar Energy Conference, 1994, pp. 1831-1834.
-
(1994)
Proceedings of the 12th European Photovoltaic Solar Energy Conference
, pp. 1831-1831
-
-
Robinson, S.J.1
Zheng, G.F.2
Bergmann, R.3
Zhang, W.4
Shi, Z.5
Green, M.A.6
-
4
-
-
68349155790
-
Analysis of selective phosphorous laser doping in high-efficiency solar cells
-
D. Kray, and K.R. McIntosh Analysis of selective phosphorous laser doping in high-efficiency solar cells IEEE Transactions on Electron Devices 56 2009 1645 1650
-
(2009)
IEEE Transactions on Electron Devices
, vol.56
, pp. 1645-1650
-
-
Kray, D.1
McIntosh, K.R.2
-
5
-
-
0000513411
-
Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data
-
R. Sinton, and A. Cuevas Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data Applied Physics Letters 69 1996 2510 2512 (Pubitemid 126595545)
-
(1996)
Applied Physics Letters
, vol.69
, Issue.17
, pp. 2510-2512
-
-
Sinton, R.A.1
Cuevas, A.2
-
6
-
-
0000987816
-
A quasi-steady state open-circuit voltage method for solar cell characterization
-
Glasgow, UK
-
R.A. Sinton, A. Cuevas, A quasi-steady state open-circuit voltage method for solar cell characterization, in: Proceedings of the 16th European Photovoltaic Solar Energy Conference, Glasgow, UK, 2000, pp. 1152-1155.
-
(2000)
Proceedings of the 16th European Photovoltaic Solar Energy Conference
, pp. 1152-1155
-
-
Sinton, R.A.1
Cuevas, A.2
-
8
-
-
33748621800
-
Statistics of the recombinations of holes and electrons
-
W. Shockley, and W.T. Read Statistics of the recombinations of holes and electrons Physical Review 87 1952 835 842
-
(1952)
Physical Review
, vol.87
, pp. 835-842
-
-
Shockley, W.1
Read, W.T.2
-
9
-
-
36149004075
-
Electron-hole recombination in germanium
-
R.N. Hall Electron-hole recombination in germanium Physical Review 87 1952 387
-
(1952)
Physical Review
, vol.87
, pp. 387
-
-
Hall, R.N.1
-
11
-
-
33845421788
-
General parameterization of Auger recombination in crystalline silicon
-
M. Kerr, and A. Cuevas General parameterization of Auger recombination in crystalline silicon Journal of Applied Physics 91 2002 2473 2480
-
(2002)
Journal of Applied Physics
, vol.91
, pp. 2473-2480
-
-
Kerr, M.1
Cuevas, A.2
-
12
-
-
0025445393
-
Evolution of silicon wafer cleaning technology
-
W. Kern The evolution of silicon wafer cleaning technology Journal of the Electrochemical Society 137 1990 1887 1892 (Pubitemid 20706690)
-
(1990)
Journal of the Electrochemical Society
, vol.137
, Issue.6
, pp. 1887-1892
-
-
Kern Werner1
-
13
-
-
0000612857
-
Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors
-
H. Nagel, C. Berge, and A. Aberle Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors Journal of Applied Physics 86 1999 6218 6221 (Pubitemid 129647838)
-
(1999)
Journal of Applied Physics
, vol.86
, Issue.11
, pp. 6218-6221
-
-
Nagel, H.1
Berge, C.2
Aberle, A.G.3
-
14
-
-
0001060922
-
Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors
-
A.B. Sproul Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors Journal of Applied Physics 76 1994 2851 2854
-
(1994)
Journal of Applied Physics
, vol.76
, pp. 2851-2854
-
-
Sproul, A.B.1
-
15
-
-
27944443296
-
Photoluminescence: A surprisingly sensitive lifetime technique
-
Conference Record of the 31st IEEE Photovoltaic Specialists Conference - 2005
-
T. Trupke, R.A. Bardos, Photoluminescence: a surprisingly sensitive lifetime technique, in: Proceedings of the 31st IEEE Photovoltaic Specialists Conference, 2005, pp. 903-906. (Pubitemid 41667929)
-
(2005)
Conference Record of the IEEE Photovoltaic Specialists Conference
, pp. 903-906
-
-
Trupke, T.1
Bardos, R.A.2
-
16
-
-
0032622269
-
Trapping of minority carriers in multicrystalline silicon
-
D. Macdonald, and A. Cuevas Trapping of minority carriers in multicrystalline silicon Applied Physics Letters 74 1999 1710 1712 (Pubitemid 129310614)
-
(1999)
Applied Physics Letters
, vol.74
, Issue.12
, pp. 1710-1712
-
-
Macdonald, D.1
Cuevas, A.2
-
17
-
-
31944443358
-
Trapping artifacts in quasi-steady-state photoluminescence and photoconductance lifetime measurements on silicon wafers
-
R.A. Bardos, T. Trupke, M.C. Schubert, and T. Roth Trapping artifacts in quasi-steady-state photoluminescence and photoconductance lifetime measurements on silicon wafers Applied Physics Letters 88 2006 053504 053513
-
(2006)
Applied Physics Letters
, vol.88
, pp. 053504-053513
-
-
Bardos, R.A.1
Trupke, T.2
Schubert, M.C.3
Roth, T.4
-
18
-
-
33847637074
-
A model for the steady-state photoconductance of an abrupt p-n junction semiconductor diode assuming flat quasi-fermi levels
-
DOI 10.1109/TED.2006.888719
-
K. McIntosh A model for the steady-state photoconductance of an abrupt p-n junction semiconductor diode assuming flat quasi-fermi levels IEEE Transactions on Electron Devices 54 2007 346 353 (Pubitemid 46358422)
-
(2007)
IEEE Transactions on Electron Devices
, vol.54
, Issue.2
, pp. 346-353
-
-
McIntosh, K.R.1
-
19
-
-
1542306857
-
Experimental verification of the effect of depletion-region modulation on photoconductance lifetime measurements
-
P. Cousins, D. Neuhaus, and J. Cotter Experimental verification of the effect of depletion-region modulation on photoconductance lifetime measurements Journal of Applied Physics 95 2004 1854 1858
-
(2004)
Journal of Applied Physics
, vol.95
, pp. 1854-1858
-
-
Cousins, P.1
Neuhaus, D.2
Cotter, J.3
-
20
-
-
41749123947
-
Effective excess carrier lifetimes exceeding 100 milliseconds in float zone silicon determined from photoluminescence
-
T. Trupke, R.A. Bardos, F. Hudert, P. Wurfel, J. Zhao, A. Wang, M.A. Green, Effective excess carrier lifetimes exceeding 100 milliseconds in float zone silicon determined from photoluminescence, in: Proceedings of the 19th European Photovoltaic Solar Energy Conference, Paris, 2004, pp. 758-761.
-
(2004)
Proceedings of the 19th European Photovoltaic Solar Energy Conference, Paris
, pp. 758-761
-
-
Trupke, T.1
Bardos, R.A.2
Hudert, F.3
Wurfel, P.4
Zhao, J.5
Wang, A.6
Green, M.A.7
-
21
-
-
55249083311
-
Generalized procedure to determine the dependence of steady-state photoconductance lifetime on the occupation of multiple defects
-
K. McIntosh, B. Paudyal, and D. Macdonald Generalized procedure to determine the dependence of steady-state photoconductance lifetime on the occupation of multiple defects Journal of Applied Physics 104 2008 084503 084506
-
(2008)
Journal of Applied Physics
, vol.104
, pp. 084503-084506
-
-
McIntosh, K.1
Paudyal, B.2
Macdonald, D.3
-
22
-
-
55249083311
-
Erratum: Generalized procedure to determine the dependence of steady-state photoconductance lifetime on the occupation of multiple defects
-
K. McIntosh, B. Paudyal, and D. Macdonald Erratum: generalized procedure to determine the dependence of steady-state photoconductance lifetime on the occupation of multiple defects Journal of Applied Physics 104 2008 084503
-
(2008)
Journal of Applied Physics
, vol.104
, pp. 084503
-
-
McIntosh, K.1
Paudyal, B.2
Macdonald, D.3
-
26
-
-
84867467918
-
Improved quantitative description of Auger recombination in crystalline silicon
-
A. Richter, S. Glunz, F. Werner, J. Schmidt, and A. Cuevas Improved quantitative description of Auger recombination in crystalline silicon Physical Review B 86 2012 165202 165214
-
(2012)
Physical Review B
, vol.86
, pp. 165202-165214
-
-
Richter, A.1
Glunz, S.2
Werner, F.3
Schmidt, J.4
Cuevas, A.5
-
27
-
-
84880065715
-
Immeasurably low surface recombination velocity passivated by low absorption silicon nitride on c-Si
-
Y. Wan, K. McIntosh, A. Thomson, A. Cuevas, Immeasurably low surface recombination velocity passivated by low absorption silicon nitride on c-Si, in: Proceedings of the 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012.
-
(2012)
Proceedings of the 38th IEEE Photovoltaic Specialists Conference (PVSC)
-
-
Wan, Y.1
McIntosh, K.2
Thomson, A.3
Cuevas, A.4
-
29
-
-
0031097690
-
Prediction of the open-circuit voltage of solar cells from the steady-state photoconductance
-
A. Cuevas, and R.A. Sinton Prediction of the open-circuit voltage of solar cells from the steady-state photoconductance Progress in Photovoltaics: Research and Applications 5 1997 79 90 (Pubitemid 127650833)
-
(1997)
Progress in Photovoltaics: Research and Applications
, vol.5
, Issue.2
, pp. 79-90
-
-
Cuevas, A.1
Sinton, R.A.2
-
30
-
-
0037415913
-
Space-charge region-dominated steady-state photoconductance in low-lifetime Si wafers
-
M. Bail, M. Schulz, and R. Brendel Space-charge region-dominated steady-state photoconductance in low-lifetime Si wafers Applied Physics Letters 82 2003 757 759
-
(2003)
Applied Physics Letters
, vol.82
, pp. 757-759
-
-
Bail, M.1
Schulz, M.2
Brendel, R.3
-
31
-
-
0036471761
-
Recombination at the interface between silicon and stoichiometric plasma silicon nitride
-
DOI 10.1088/0268-1242/17/2/314, PII S0268124202299769
-
M.J. Kerr, and A. Cuevas Recombination at the interface between silicon and stoichiometric plasma silicon nitride Semiconductor Science and Technology 17 2002 166 172 (Pubitemid 34172785)
-
(2002)
Semiconductor Science and Technology
, vol.17
, Issue.2
, pp. 166-172
-
-
Kerr, M.J.1
Cuevas, A.2
-
32
-
-
3142761245
-
Passivation of crystalline silicon using silicon nitride
-
A. Cuevas, M.J. Kerr, J. Schmidt, Passivation of crystalline silicon using silicon nitride, in: Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, 2003, pp. 913-918.
-
(2003)
Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
, pp. 913-918
-
-
Cuevas, A.1
Kerr, M.J.2
Schmidt, J.3
-
33
-
-
0000488461
-
Injection-level dependent surface recombination velocities at the silicon-plasma silicon nitride interface
-
A. Aberle, T. Lauinger, J. Schmidt, and R. Hezel Injection-level dependent surface recombination velocities at the silicon-plasma silicon nitride interface Applied Physics Letters 66 1995 2828 2830
-
(1995)
Applied Physics Letters
, vol.66
, pp. 2828-2830
-
-
Aberle, A.1
Lauinger, T.2
Schmidt, J.3
Hezel, R.4
-
34
-
-
0036953415
-
Fixed charge density in silicon nitride films on crystalline silicon surfaces under illumination
-
S. Dauwe, J. Schmidt, A. Metz, R. Hezel, Fixed charge density in silicon nitride films on crystalline silicon surfaces under illumination, in: Proceedings of the 29th IEEE Photovoltaic Specialists Conference, 2002, pp. 162-165.
-
(2002)
Proceedings of the 29th IEEE Photovoltaic Specialists Conference
, pp. 162-165
-
-
Dauwe, S.1
Schmidt, J.2
Metz, A.3
Hezel, R.4
-
36
-
-
0000962572
-
Observation of multiple defect states at silicon-silicon nitride interfaces fabricated by low-frequency plasma-enhanced chemical vapor deposition
-
J. Schmidt, F. Schuurmans, W. Sinke, S. Glunz, and A. Aberle Observation of multiple defect states at silicon-silicon nitride interfaces fabricated by low-frequency plasma-enhanced chemical vapour deposition Applied Physics Letters 71 1997 252 254 (Pubitemid 127650520)
-
(1997)
Applied Physics Letters
, vol.71
, Issue.2
, pp. 252-254
-
-
Schmidt, J.1
Schuurmans, F.M.2
Sinke, W.C.3
Glunz, S.W.4
Aberle, A.G.5
-
37
-
-
85009873534
-
High-efficiency silicon solar cells: Fill factor limitations and non-ideal diode behaviour due to voltage-dependent rear surface recombination velocity
-
A. Aberle, S. Robinson, A. Wang, J. Zhao, S. Wenham, and M. Green High-efficiency silicon solar cells: fill factor limitations and non-ideal diode behaviour due to voltage-dependent rear surface recombination velocity Progress in Photovoltaics: Research and Applications 1 1993 133 143
-
(1993)
Progress in Photovoltaics: Research and Applications
, vol.1
, pp. 133-143
-
-
Aberle, A.1
Robinson, S.2
Wang, A.3
Zhao, J.4
Wenham, S.5
Green, M.6
-
40
-
-
81855208824
-
Fill factor limitations and non-ideal diode behaviour of Czochralski silicon solar cells due to light-induced recombination centres
-
J. Schmidt, A. Cuevas, S. Rein, S. Glunz, Fill factor limitations and non-ideal diode behaviour of Czochralski silicon solar cells due to light-induced recombination centres, in: Proceedings of the 17th European Photovoltaic Solar Energy Conference, 2001, pp. 1396-1399.
-
(2001)
Proceedings of the 17th European Photovoltaic Solar Energy Conference
, pp. 1396-1399
-
-
Schmidt, J.1
Cuevas, A.2
Rein, S.3
Glunz, S.4
-
41
-
-
0034228219
-
Reduced fill factors in multicrystalline silicon solar cells due to injection-level dependent bulk recombination lifetimes
-
D. Macdonald, and A. Cuevas Reduced fill factors in multicrystalline silicon solar cells due to injection-level dependent bulk recombination lifetimes Progress in Photovoltaics: Research and Applications 8 2000 363 375
-
(2000)
Progress in Photovoltaics: Research and Applications
, vol.8
, pp. 363-375
-
-
Macdonald, D.1
Cuevas, A.2
|