Generalized procedure to determine the dependence of steady-state photoconductance lifetime on the occupation of multiple defects

Journal of Applied Physics

Volumn 104, Issue 8, 2008, Pages

  McIntosh, Keith R ^a   Paudyal, Bijaya B ^a   MacDonald, Daniel H ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BIOACTIVITY; CARRIER CONCENTRATION; CIVIL AVIATION; CONCENTRATION (PROCESS); EMPLOYMENT; POLYSILICON; SILICON;

ANALYTICAL EQUATIONS; ANALYTICAL MODELS; DEFECT CONCENTRATIONS; ELEVATED TEMPERATURES; EXPERIMENTAL SAMPLES; MULTICRYSTALLINE SILICONS; MULTIPLE DEFECTS; NUMERICAL ITERATIONS; NUMERICAL PROCEDURES; PHOTOCONDUCTANCE; PHOTOCONDUCTANCE LIFETIME MEASUREMENTS; PHOTOCONDUCTANCE LIFETIMES;

DEFECTS;

EID: 55249083311     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2999640     Document Type: Article

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