A model for the steady-state photoconductance of an abrupt p-n junction semiconductor diode assuming flat quasi-fermi levels

IEEE Transactions on Electron Devices

Volumn 54, Issue 2, 2007, Pages 346-353

  McIntosh, Keith R ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Carrier lifetime; Depletion region; Depletion region modulation (DRM); Photoconductance; Recombination; Space charge region

Indexed keywords

CARRIER CONCENTRATION; CARRIER LIFETIME; FERMI LEVEL; GEOMETRY; MATHEMATICAL MODELS; PHOTOCONDUCTIVITY; SEMICONDUCTOR JUNCTIONS;

DEPLETION REGION MODULATION (DRM); PHOTOCONDUCTANCE; RECOMBINATION; SPACE-CHARGE REGION;

SEMICONDUCTOR DIODES;

EID: 33847637074     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.888719     Document Type: Article

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