Real-time study of switching kinetics in integrated 1T/ HfOx 1R RRAM: Intrinsic tunability of set/reset voltage and trade-off with switching time

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Koveshnikov, S ^a,b   Matthews, K ^a   Min, K ^b   Gilmer, D C ^a   Sung, M G ^a   Deora, S ^a   Li, H F ^c   Gausepohl, S ^c   Kirsch, P D ^a   Jammy, R ^a  

^a SEMATECH   (United States)

^b INTEL CORPORATION   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILAMENTS; HIGH VOLUME MANUFACTURING; INTRINSIC POTENTIAL; REAL-TIME STUDIES; SWITCHING CHARACTERISTICS; SWITCHING KINETICS; SWITCHING TIME; VOLTAGE TUNING;

ECONOMIC AND SOCIAL EFFECTS; ELECTRON DEVICES;

RANDOM ACCESS STORAGE;

EID: 84876128921     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479080     Document Type: Conference Paper

References (2)

1. Y. S. Chen et al, IEDM tech Dig., p.105, 2009
2. D. Ielmini, Electron.Dev.Lett., 58, p.4309, 2011