Endurance improvement technology with nitrogen implanted in the interface of WSiOx resistance switching device

IEEE Electron Device Letters

Volumn 34, Issue 7, 2013, Pages 864-866

  Syu, Yong En ^a,b   Zhang, Rui ^c   Chang, Ting Chang ^a,b   Tsai, Tsung Ming ^a   Chang, Kuan Chang ^a   Lou, Jen Chung ^c   Young, Tai Fa ^a   Chen, Jung Hui ^d   Chen, Min Chen ^a,b   Yang, Ya Liang ^a   Shih, Chih Cheng ^d   Chu, Tian Jian ^a   Chen, Jian Yu ^a,b   Pan, Chih Hung ^a   Su, Yu Ting ^a,b   Huang, Hui Chun ^a   Gan, Der Shin ^a   Sze, Simon M ^e  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c PEKING UNIVERSITY   (China)

^d NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

^e NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Nonvolatile memory; resistance switching; tungsten silicon oxide (WSiO x)

Indexed keywords

DOUBLE LAYERS; ENDURANCE IMPROVEMENT; MEMORY STRUCTURE; NON-VOLATILE MEMORY; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; SWITCHING MECHANISM; TIN ELECTRODES;

NITROGEN; OXYGEN; SILICON OXIDES; SWITCHING; TIN OXIDES; TUNGSTEN;

RANDOM ACCESS STORAGE;

EID: 84880062187     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2260125     Document Type: Article

References (17)

1. M. Wuttig and N. Yamada, "Phase-change materials for rewriteable data storage," Nature Mater., vol. 6, pp. 824-832, Nov. 2007. (Pubitemid 350050578)
2. R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-based resistive switching memories nanoionic mechanisms, prospects, and challenges," Adv. Mater., vol. 21, nos. 25-26, pp. 2632-2663, 2009.
3. T. C. Chang, F. Y. Jian, S. C. Chen, and Y. T. Tsai, "Developments in nanocrystal memory," Mater. Today, vol. 14, no. 12, pp. 608-615, Dec. 2011.
4. S. S. P. Parkin, K. P. Roche, M. G. Samant, P. M. Rice, R. B. Beyers, R. E. Scheuerlein, E. J. O'Sullivan, S. L. Brown, J. Bucchigano, D. W. Abraham, Y. Lu, M. Rooks, P. L. Trouilloud, R. A. Wanner, and W. J. Gallagher, "Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory," J. Appl. Phys., vol. 85, no. 8, pp. 5828-5835, 1999.
5. J. Liu, Q. Wang, S. Long, M. Zhang, and M. Liu, "A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for highperformance non-volatile memory application," Semicond. Sci. Technol., vol. 25, no. 5, p. 055013, 2010.
6. Q. Liu, S. B. Long, W. Wang, Q. Y. Zuo, S. Zhang, J. N. Chen, and M. Liu, "Improvement of resistive switching properties in ZrO2-based ReRAM with implanted Ti ions," IEEE Electron Device Lett., vol. 30, no. 12, pp. 1335-1337, Dec. 2009.
7. Y. E. Syu, T. C. Chang, T. M. Tsai, Y. C. Hung, K. C. Chang, and M. J. Tsai, "Redox reaction switching mechanism in RRAM device with Pt/CoSiOX /TiN structure," IEEE Electron Device Lett., vol. 32, no. 4, pp. 545-547, Apr. 2011.
8. K. C. Chang, T. M. Tsai, T. C. Chang, Y. E. Syu, S. L. Chuang, C. H. Lia, D. S. Gan, and S. M. Sze, "The effect of silicon oxide based RRAM with tin doping," Electrochem. Solid-State Lett., vol. 15, no. 3, pp. H65-H68, 2012.
9. T. M. Tsai, K. C. Chang, T. C. Chang, Y. E. Syu, S. L. Chuang, G. R. Liu, M. C. Chen, H. C. Huang, S. K. Liu, Y. H. Tai, D. S. Gan, Y. L. Yang, T.-F. Young, B.-H. Tseng, K.-H. Chen, M.-J. Tsai, C. Ye, H. Wang, and S. M. Sze, "Bipolar resistive RAM characteristics induced by nickel incorporated into silicon oxide dielectrics for IC applications," IEEE Electron Device Lett., vol. 33, no. 12, pp. 1696-1698, Dec. 2012.
10. M. C. Chen, T. C. Chang, S. Y. Huang, K. C. Chang, H. W. Li, S. C. Chen, J. Lu, and Y. Shi, "A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid," Appl. Phys. Lett., vol. 94, no. 16, pp. 162111-1-162111-3, 2009.
11. T. M. Tsai, K. C. Chang, T. C. Chang, G. W. Chang, Y. E. Syu, G.W. Chang, Y. T. Su, G. R. Liu, K. H. Liao,M. C. Chen, H. C. Huang, Y. H. Tai, D. S. Gan, "Origin of hopping conduction in Sn-doped silicon oxide RRAM with supercritical CO2 fluid treatment," IEEE Electron Device Lett., vol. 33, no. 12, pp. 1693-1695, Dec. 2012.
12. K. C. Chang, T. M. Tsai, T. C. Chang, Y. E. Syu, C. C. Wang, S. L. Chuang, C. H. Li, D.-S. Gan, and S. M. Sze, "Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment," Appl. Phys. Lett., vol. 99, no. 26, pp. 263501-1-263501-4, 2011.
13. Y. E. Syu, T. C. Chang, T. M. Tsai, G. W. Chang, K. C. Chang, J. H. Lou, Y. H. Tai, M. J. Tsai, Y.-L. Wang, and S. M. Sze, "Asymmetric carrier conduction mechanism by tip electric field in WSiOX resistance switching device," IEEE Electron Device Lett., vol. 33, no. 3, pp. 342-344, Mar. 2012.
14. Y. T. Li, S. B. Long, M. H. Zhang, Q. Liu, S. Zhang, Y. Wang, Q. Y. Zuo, S. Liu, and M. Liu, "Resistive switching properties of Au/ZrO2/Ag structure for low voltage nonvolatile memory applications," IEEE Electron Device Lett., vol. 31, no. 2, pp. 117-119, Feb. 2010.
15. A. Sawa, "Resistive switching in transition metal oxides," Mater. Today, vol. 11, no. 6, pp. 28-36, 2008. (Pubitemid 351680723)
16. K. P. C. Vollhardt and N. E. Schore, Organic Chemistry, 3rd ed. San Francisco, CA, USA: Freeman, 1998.
17. P. Atkins, Physical Chemistry, 8th ed. New York, NY, USA: Oxford Univ. Press, 2005. for Nano-Science and Nano-Technology