Nanoporous GaN-Ag composite materials prepared by metal-assisted electroless etching for direct laser desorption-ionization mass spectrometry

ACS Applied Materials and Interfaces

Volumn 5, Issue 13, 2013, Pages 6208-6215

  Nie, Bei ^a   Duan, Barrett K ^a   Bohn, Paul W ^a,b  

^a UNIVERSITY OF NOTRE DAME   (United States)

^b University of Notre Dame   (United States)

Author keywords

gallium nitride; laser desorption ionization; mass spectrometry; nanoparticles; porous semiconductors

Indexed keywords

ANODIC ALUMINUM MEMBRANE; COMPOSITE NANOSTRUCTURES; LDI MASS SPECTROMETRY; MORPHOLOGICAL FEATURES; NANOSTRUCTURE SURFACE; POROUS SEMICONDUCTORS; SILVER NANOPARTICLES; UV-LASER IRRADIATION;

CHEMICAL ANALYSIS; ETCHING; GALLIUM NITRIDE; IONIZATION; MASS SPECTROMETRY; METAL NANOPARTICLES; NANOPARTICLES; NANOSTRUCTURES; ORGANIC LASERS; QUALITY CONTROL;

SILVER;

CHOLESTEROL; GALLIUM; GALLIUM NITRIDE; NANOCOMPOSITE; NUCLEOTIDE; SILVER;

ARTICLE; CHEMISTRY; EQUIPMENT; MASS SPECTROMETRY; METHODOLOGY; POROSITY;

CHOLESTEROL; GALLIUM; MASS SPECTROMETRY; NANOCOMPOSITES; NUCLEOTIDES; POROSITY; SILVER;

EID: 84880060784     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am401132s     Document Type: Article

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