The investigation of dark current reduction in MSM photodetector based on porous GaN

Journal of Optoelectronics and Advanced Materials

Volumn 10, Issue 2, 2008, Pages 396-399

  Yam, F K ^a   Hassan, Z ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Dark current; MSM photodetector; Porous GaN

Indexed keywords

DARK CURRENTS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; PHOTONS; WIDE BAND GAP SEMICONDUCTORS;

AS-GROWN; COMPARATIVE STUDIES; CURRENT REDUCTION; GAN LAYERS; METAL SEMICONDUCTOR METAL PHOTODETECTOR; MSM PHOTODETECTOR; ORDERS OF MAGNITUDE; POROUS GAN;

PHOTODETECTORS;

EID: 40549111023     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (19)