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Volumn 1, Issue 22, 2013, Pages 3544-3550

Fabrication of highly ordered sub-20 nm silicon nanopillars by block copolymer lithography combined with resist design

(10) Salaun, Mathieu a Zelsmann, Marc a Archambault, Sophie a Borah, Dipu b,c Kehagias, Nikolaos d Simao, Claudia d Lorret, Olivier e Shaw, Matthew T f Sotomayor Torres, Clivia M d,g Morris, Mickael A b,c,h

a Université Joseph Fourier (France)

b UNIVERSITY COLLEGE CORK (Ireland)

c UNIVERSITY COLLEGE CORK (Ireland)

d UNIVERSITAT AUTÒNOMA DE BARCELONA (Spain)

e PROFACTOR GMBH (Austria)

f Intel Ireland Ltd (Ireland)

g INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS ICREA (Spain)

h TRINITY COLLEGE DUBLIN (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCK COPOLYMER LITHOGRAPHY; COPOLYMER THIN FILMS; FABRICATION PROCESS; FAVORABLE CONDITIONS; POLY(STYRENE-B-DIMETHYLSILOXANE); RECTANGULAR CROSS-SECTION CHANNELS; SELF-ASSEMBLED PATTERNS; SILICON NANOPILLARS;

ASPECT RATIO; BLOCK COPOLYMERS; BRUSHES; CYLINDERS (SHAPES); FABRICATION; NANOIMPRINT LITHOGRAPHY; SELF ASSEMBLY; SILICON; SILICONES; STYRENE; SURFACE CHEMISTRY; VAPORS;

SILICON WAFERS;

EID: 84879965439 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c3tc30300d Document Type: Article

Times cited : (28)

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