High-performance transparent AZO TFTs fabricated on glass substrate

IEEE Transactions on Electron Devices

Volumn 60, Issue 7, 2013, Pages 2432-2435

  Cai, Jian ^a   Han, Dedong ^a   Geng, Youfeng ^a   Wang, Wei ^a   Wang, Liangliang ^a   Zhang, Shengdong ^a   Wang, Yi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Aluminum doped zinc oxide (AZO); high performance; low temperature process; thin film transistor (TFT)

Indexed keywords

ALUMINUM-DOPED ZINC OXIDE; C. THIN FILM TRANSISTOR (TFT); FIELD-EFFECT MOBILITIES; HIGH PERFORMANCE; LOW- TEMPERATURE PROCESS; PROCESS TEMPERATURE; STEEP SUBTHRESHOLD SWINGS; THIN-FILM TRANSISTOR (TFTS);

OPTICAL FILMS; SEMICONDUCTING ORGANIC COMPOUNDS; SUBSTRATES; TEMPERATURE; THIN FILM TRANSISTORS;

GLASS;

EID: 84879957752     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2264319     Document Type: Article

References (16)

1. L. Je-Hsiung, J. Kanicki, A. Catalano, and J. Keane, "An alternative transparent conducting oxide to ITO for the a-Si:H TFT-LCD applications," in Proc. 2nd Int. Workshop Active Matrix Liquid Crystal Displays, Sep. 1995, pp. 54-57.
2. X. Zou, J. P. Xu, P. T. Lai, Y. Li, F. Ji, and L. F. Deng, "Electrical characteristics of AI-doped ZnO-channel thinfilm transistor with high-K HfON/Si02 stack gate dielectric," in Proc. IEEE Int. Conf. Electron Devices Solid-State Circuits, Dec. 2010, pp. 1-4.
3. P. Ray and V. R. Rao, "Al-doped ZnO thin-film transistor embedded micro-cantilever as a piezoresistive sensor," Appl. Phys. Lett., vol. 102, no. 6, pp. 064101-1-064101-4, Feb. 2013.
4. D.-H. Cho, S. Yang, C. Byun, J. Shin, M. K. Ryu, S.-H. K. Park, C.-S. Hwang, S. M. Chung, W.-S. Cheong, S. M. Yoon, and H.-Y. Chu, "Transparent Al-Zn-Sn-O thin film transistors prepared at low temperature," Appl. Phys. Lett., vol. 93, no. 14, pp. 142111-1-142111-3, Oct. 2008.
5. W. J. Maeng, S.-J. Kim, J.-S. Park, K.-B. Chung, and H. Kim, "Low temperature atomic deposited Al-doped ZnO thin films and associated semiconducting properties," J. Vacuum. Sci. Technol. B, vol. 30, no. 3, pp. 031210-1-031210-7, Apr. 2012.
6. A. C. Hyoun, K. B. Hyun, K. Hyoungsub, and C. H. Koun, "Improved electrical stability in the Al doped ZnO thin-film-transistors grown by atomic layer deposition," J. Electrochem. Soc., vol. 158, no. 2, pp. H170-H173, 2011.
7. L. C. Ting, W. M. Shien, H. Y. Lee, and C. H. Chou, "ZnO:Al based transparent thin film transistors," in Proc. IEEE 21st Annu. Meeting Lasers Electro-Optics. Soc., Nov. 2008, pp. 65-66.
8. S. I. Kim, C. J. Kim, J. C. Park, I. Song, S. W. Kim, H. Yin, E. Lee, J. C. Lee, and Y. Park, "High performance oxide thin film transistors with double active layers," in Proc. IEEE IEDM, Dec. 2008, pp. 73-77.
9. L. Zhang, J. Li, X. W. Zhang, X. Y. Jiang, and Z. L. Zhang, "High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature," Appl. Phys. Lett., vol. 95, no. 7, pp. 072112-1-072112-3, Aug. 2009.
10. P. Jin-Seong, J. K. Jeong, Y.-G. Mo, H. D. Kim, and S.-I. Kim, "Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment," Appl. Phys. Lett., vol. 90, no. 26, pp. 262106-1-262106-3, Jun. 2007.
11. M. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, H. S. Shin, J.-S. Park, J. K. Jeong, Y.-G. Mo, and H. D. Kim, "High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper," Appl. Phys. Lett., vol. 90, no. 21, pp. 212114-1-21211-3, May 2007.
12. D. H. Kang, I. Kang, S. H. Ryu, and J. Jang, "Self-aligned coplanar a-IGZO TFTs and application to high-speed circuits," IEEE Electron Devices Lett., vol. 32, no. 10, pp. 1385-1387, Oct. 2011.
13. S. Kim, Y. W. Jeon, Y. Kim, D. Kong, H. K. Jung, M.-K. Bae, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. Park, H.-I. Kwon, D. M. Kim, and D. H. Kim, "Impact of oxygen flow rate on the instability under positive bias stresses in DC-sputtered amorphous InGaZnO thin-film transistors," IEEE Electron Devices Lett., vol. 33, no. 1, pp. 62-64, Jan. 2012.
14. L. Lan and J. Peng, "High-performance indium-gallium-zinc oxide thin film transistors based on anodic aluminum oxide," IEEE Trans. Electron Devices, vol. 58, no. 5, pp. 1452-1455, May 2011.
15. H.-S. Uhm, S.-H. Lee, W. Kim, and J.-S. Park, "A two-mask process for fabrication of bottom-gate IGZO-based TFTs," IEEE Electron Devices Lett., vol. 33, no. 4, pp. 543-545, Apr. 2012.
16. J. S. Lee, S. Chang, S.-M. K. Lee, and S. Yeol, "High-performance a-IGZO TFT with ZrO2 gate dielectric fabricated at room temperature," IEEE Electron Devices Lett., vol. 31, no. 3, pp. 225-227, Mar. 2012.