Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO2 stack gate dielectric

2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

Volumn , Issue , 2010, Pages

  Zou, Xiao ^a   Xu, J P ^b   Lai, P T ^c   Li, Yao ^a   Ji, Feng ^b   Deng, L F ^c  

^a JIANGHAN UNIVERSITY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Al doped ZnO; HfON; Saturation mobility; Thin film transistors

Indexed keywords

ACTIVE CHANNELS; AL-DOPED ZNO; AZO FILMS; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; HFON; ON/OFF CURRENT RATIO; ORDER OF MAGNITUDE; RADIO-FREQUENCY REACTIVE SPUTTERING; SATURATION MOBILITY; STACK GATE DIELECTRICS; SUBTHRESHOLD SWING;

ALUMINUM; CARRIER CONCENTRATION; DIELECTRIC DEVICES; DRAIN CURRENT; ELECTRIC PROPERTIES; GALVANOMAGNETIC EFFECTS; GATE DIELECTRICS; GATES (TRANSISTOR); HALL MOBILITY; SEMICONDUCTING ORGANIC COMPOUNDS; SOLID STATE DEVICES; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 79952503595     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2010.5713770     Document Type: Conference Paper

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