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Applied Physics Letters

Volumn 98, Issue 10, 2011, Pages

Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond

(7) Edmonds, M T a Pakes, C I a Mammadov, S b Zhang, W b Tadich, A a,c Ristein, J b Ley, L b

a LA TROBE UNIVERSITY (Australia)

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

c AUSTRALIAN SYNCHROTRON (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; C 1S CORE LEVEL; HOLE ACCUMULATION; HOLE DENSITIES; SHEET DENSITY; SIMULTANEOUS MEASUREMENT; SURFACE BAND BENDING; SURFACE CONDUCTING; SURFACE CONDUCTIVITY; SURFACE TRANSFER DOPING;

ELECTRIC CONDUCTIVITY; WORK FUNCTION;

ELECTRON AFFINITY;

EID: 79952663223 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3561760 Document Type: Article

Times cited : (30)

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