Ferroelectric polarization effects on the transport properties of graphene/PMN-PT field effect transistors

Journal of Physical Chemistry C

Volumn 117, Issue 26, 2013, Pages 13747-13752

  Jie, Wenjing ^a   Hui, Yeung Yu ^a   Chan, Ngai Yui ^a   Zhang, Yang ^a   Lau, Shu Ping ^a   Hao, Jianhua ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC POLARIZATION; FIELD EFFECT TRANSISTOR (FETS); FIELD-EFFECT MOBILITIES; METALLIC BEHAVIORS; ON/OFF CURRENT RATIO; P-TYPE CHARACTERISTICS; POLARIZATION REVERSALS; ROOM TEMPERATURE;

FERROELECTRICITY; FIELD EFFECT TRANSISTORS; GRAPHENE; LEAD; POLARIZATION; SHEET RESISTANCE;

TRANSPORT PROPERTIES;

EID: 84879815670     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp404350r     Document Type: Article

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