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Volumn 98, Issue 26, 2011, Pages

Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CONTROL; MAGNETIC RANDOM ACCESS MEMORIES; MAGNETIZATION REORIENTATION; MAGNETIZATION STATE; MICROMAGNETIC SIMULATIONS; NI FILMS; NI THIN FILMS; POLYCRYSTALLINE; REMANENT STRAIN;

EID: 79960084575     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3605571     Document Type: Article
Times cited : (160)

References (18)
  • 1
    • 57149128202 scopus 로고    scopus 로고
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    • J. G. Zhu, Proc IEEE 96 (11), 1786 (2008). 10.1109/JPROC.2008.2004313
    • (2008) Proc IEEE , vol.96 , Issue.11 , pp. 1786
    • Zhu, J.G.1
  • 2
    • 44349161282 scopus 로고    scopus 로고
    • Multiferroics: Towards a magnetoelectric memory
    • DOI 10.1038/nmat2189, PII NMAT2189
    • M. Bibes and A. Barthelemy, Nature Mat. 7 (6), 425 (2008). 10.1038/nmat2189 (Pubitemid 351733436)
    • (2008) Nature Materials , vol.7 , Issue.6 , pp. 425-426
    • Bibes, M.1    Barthelemy, A.2
  • 4
    • 34047108644 scopus 로고    scopus 로고
    • Data storage: Multiferroic memories
    • DOI 10.1038/nmat1868, PII NMAT1868
    • J. F. Scott, Nature Mat. 6 (4), 256 (2007). 10.1038/nmat1868 (Pubitemid 46516811)
    • (2007) Nature Materials , vol.6 , Issue.4 , pp. 256-257
    • Scott, J.F.1
  • 13
    • 77954737768 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.80.224416
    • J.-M. Hu and C. W. Nan, Phys. Rev. B 80 (22), 224416 (2009). 10.1103/PhysRevB.80.224416
    • (2009) Phys. Rev. B , vol.80 , Issue.22 , pp. 224416
    • Hu, J.-M.1    Nan, C.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.