Relationship between conduction mechanism and low-frequency noise in polycrystalline-TiO x-based resistive-switching memory devices

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 1063-1065

  Lee, Jung Kyu ^a   Cho, In Tak ^a   Kwon, Hyuck In ^b   Hwang, Cheol Seong ^a   Park, Chan Hyeong ^c   Lee, Jong Ho ^a  

^a Seoul National University   (South Korea)

^b Chung Ang University   (South Korea)

^c Kwangwoon University   (South Korea)

Author keywords

Conduction mechanism; low frequency noise (LFN); resistive random access memory (RRAM); resistive switching

Indexed keywords

1/F NOISE; BIAS DEPENDENCE; CONDUCTION MECHANISM; CURRENT CONDUCTION MECHANISMS; CURRENT-VOLTAGE RELATIONSHIP; HIGH-RESISTANCE STATE; LOW-FREQUENCY NOISE; LOW-RESISTANCE STATE; NOISE MEASUREMENTS; NORMALIZED NOISE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; THREE ORDERS OF MAGNITUDE; TIO;

ELECTRON DEVICES; ELECTRONICS ENGINEERING;

RANDOM ACCESS STORAGE;

EID: 84862860870     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2196670     Document Type: Article

References (16)

1. A. Beck, J. G. Bednorz, C. Gerber, C. Rossel, and D. Widmer, "Reproducible switching effect in thin oxide films for memory applications," Appl. Phys. Lett., vol. 77, no. 1, pp. 139-141, Jul. 2000.
2. S. B. Lee, S. Park, J. S. Lee, S. C. Chae, S. H. Chang, M. H. Jung, Y. Jo, B. Kahng, B. S. Kang, M.-J. Lee, and T. W. Noh, "Large 1/f noise of unipolar switching and its percolating nature," Appl. Phys. Lett., vol. 95, no. 12, pp. 122 112-1-122 112-3, Sep. 2009.
3. J.-K. Lee, H. Y. Jeong, I.-T. Cho, J. Y. Lee, S.-Y. Choi, H.-I. Kwon, and J.-H. Lee, "Conduction and low-frequency noise analysis in Al/α-TiOx/Al bipolar switching resistance random access memory devices," IEEE Electron Device Lett., vol. 31, no. 6, pp. 603-605, Jun. 2010.
4. S. Kim, O. Yarimaga, S. J. Choi, and Y. K. Choi, "Highly durable and flexible memory based on resistance switching," Solid State Electron., vol. 54, no. 4, pp. 392-396, Apr. 2010.
5. M. J. Kirton and M. J. Uren, "Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/f) noise," Adv. Phys., vol. 38, no. 4, pp. 367-468, 1989.
6. J.-K. Lee, J.-W. Lee, J. Park, S.-W. Chung, J. S. Roh, S.-J. Hong, I. Cho, H.-I. Kwon, and J.-H. Lee, "Extraction of trap location and energy from random telegraph noise in amorphous TiOx resistance random access memories," Appl. Phys. Lett., vol. 98, no. 14, pp. 143 502-1-143 502-3, Apr. 2011.
7. Y. H. Tseng, W. C. Shen, C.-E. Huang, C. J. Lin, and Y.-C. King, "Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis," in IEDM Tech. Dig., 2010, pp. 28.5.1-28.5.4.
8. R. Schlaf, H. Murata, and Z. H. Kafafi, "Work function measurements on indium tin oxide films," J. Electron Spectrosc. Relat. Phenom., vol. 120, no. 1-3, pp. 149-154, Oct. 2001. (Pubitemid 32903541)
9. D. H. Kim and D. Lim, "Formation of Cr nanocrystals for nonvolatile memory applications," J. Korean Phys. Soc., vol. 55, no. 4, pp. 1519-1524, Oct. 2009.
10. J. J. Huang, C. W. Kuo, W. C. Chang, and T. H. Hou, "Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode," Appl. Phys. Lett., vol. 96, no. 26, pp. 262 901-1-262 901-3, Jun. 2010.
11. J. Park, K. P. Biju, S. Jung, W. Lee, J. Lee, S. Kim, S. Park, J. Shin, and H. Hwang, "Multibit operation of TiOx-based ReRAM by Schottky barrier height engineering," IEEE Electron Device Lett., vol. 32, no. 4, pp. 476-478, Apr. 2011.
12. C.-H. Liu, H.-W. Chen, S.-Y. Chen, H.-S. Huang, and L.-W. Cheng, "Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics," Appl. Phys. Lett., vol. 95, no. 1, pp. 012103-1-012103-3, Jul. 2009.
13. C. H. Park and J.-H. Lee, "Formulas for 1/f noise in Schottky barrier diodes under reverse-bias," Solid State Electron., vol. 69, no. 3, pp. 85-88, Mar. 2012.
14. F. N. Hooge, "1/f noise," Physica, vol. 83B, pp. 14-23, 1976.
15. R. F. Voss and J. Clarke, "1/f noise from systems in thermal equilibrium," Phys. Rev. Lett., vol. 36, no. 1, pp. 42-45, Jan. 1976.
16. F. N. Hooge, "Discussion of recent experiment on 1/f noise," Physica, vol. 60, no. 1, pp. 130-144, Jul. 1972.