Physical mechanism of HfO2-based bipolar resistive random access memory

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2011, Pages 110-113

  Chang, Huan Lin ^a   Li, Hsuan Chih ^a   Liu, C W ^a   Chen, F ^b   Tsai, M J ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CELL SIZE; CMOS PROCESSS; CURRENT CONDUCTION; DEVICE OPTIMIZATION; METAL INSULATORS; PHYSICAL MECHANISM; PHYSICAL MODEL; RESISTANCE FLUCTUATION; RESISTIVE RANDOM ACCESS MEMORY; SOFT ERROR;

CMOS INTEGRATED CIRCUITS; HAFNIUM OXIDES; METAL INSULATOR BOUNDARIES; MIM DEVICES; TITANIUM NITRIDE;

RANDOM ACCESS STORAGE;

EID: 79959919688     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2011.5872253     Document Type: Conference Paper

References (2)

1. H.-Y. Lee et al., IEDM Tech. Dig., pp. 297-300, 2008.
2. S.-S. Sheu et al., VLSI Symp. Tech. Dig., pp. 82-83, 2009.