Influence of process parameters on band gap of Al-doped ZnO film

Frontiers of Optoelectronics

Volumn 6, Issue 1, 2013, Pages 114-121

  Huang, Diqiu ^a   Zeng, Xiangbin ^a   Zheng, Yajuan ^a   Wang, Xiaojin ^a   Yang, Yanyan ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Al doped ZnO thin films; argon (Ar) flow rate; band gap; carrier concentration; sputtering power; substrate temperature

Indexed keywords

EID: 84879446175     PISSN: 20952759     EISSN: 20952767     Source Type: Journal    
DOI: 10.1007/s12200-012-0302-x     Document Type: Article

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