Optical band gap modulation by Mg-doping in In 2O 3(ZnO) 3 ceramics

Ceramics International

Volumn 38, Issue 8, 2012, Pages 6693-6697

  Lee, Hwa Jong ^a   Lee, Jung A ^a   Lee, Joon Hyung ^a   Heo, Young Woo ^a   Kim, Jeong Joo ^a   Park, Seong Kee ^b   Lim, Jungshik ^b  

^a Kyungpook National University   (South Korea)

^b LG Display Co Ltd   (South Korea)

Author keywords

Band gap; Doping; Indium zinc oxide; Transparent conducting oxide

Indexed keywords

BAND GAP ENERGY; BANDGAP MODULATION; BURSTEIN-MOSS EFFECTS; ELECTRICAL CHARACTERISTIC; INDIUM ZINC OXIDES; MG CONTENT; MG-DOPING; OPTICAL BANDS; RF MAGNETRON SPUTTERING METHOD; TRANSPARENT CONDUCTING OXIDE; ZNO;

DOPING (ADDITIVES); ENERGY GAP; MAGNETRON SPUTTERING; OPTICAL BAND GAPS; THIN FILMS; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 84865711105     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2012.05.058     Document Type: Article

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