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Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 6, 2008, Pages 528-532

Effects of working pressure on the electrical and optical properties of aluminum-doped zinc oxide thin films

(5) Moon, Yeon Keon a Bang, Borae a Kim, Se Hyun a Jeong, Chang Oh b Park, Jong Wan a

a Hanyang University (South Korea)

b SAMSUNG Electronics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FILM DENSITY; FILM STRUCTURE; MEAN FREE PATH; WORKING PRESSURE;

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC PROPERTIES; MAGNETRON SPUTTERING; OPTICAL BAND GAPS; OPTICAL PROPERTIES; PRESSURE EFFECTS; THIN FILMS;

ZINC OXIDE;

EID: 41149148752 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-007-9375-5 Document Type: Article

Times cited : (17)

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