High-mobility transistors based on single crystals of isotopically substituted rubrene- d 28

Journal of Physical Chemistry C

Volumn 117, Issue 22, 2013, Pages 11522-11529

  Xie, Wei ^a   McGarry, Kathryn A ^a   Liu, Feilong ^a   Wu, Yanfei ^a   Ruden, P Paul ^a   Douglas, Christopher J ^a   Frisbie, C Daniel ^a  

^a University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; SINGLE CRYSTALS; TRANSPORT PROPERTIES;

BAND-LIKE TRANSPORTS; BROAD TEMPERATURE RANGES; CHARACTERISTIC ENERGY; DEUTERIUM INCORPORATIONS; ELECTRICAL TRANSPORT PROPERTIES; MULTI-GRAM QUANTITIES; SYNTHESIS AND CHARACTERIZATIONS; TRANSISTOR ARCHITECTURE;

HOLE MOBILITY;

EID: 84879390341     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp402250v     Document Type: Article

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