Dislocations and grain boundaries in semiconducting rubrene single-crystals

Journal of Crystal Growth

Volumn 290, Issue 2, 2006, Pages 479-484

  Chapman, B D ^a   Checco, A ^a   Pindak, R ^a   Siegrist, T ^b   Kloc, C ^b  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

A1. Defects; A1. X ray topography; A2. Growth from vapor; B1. Organic compounds; B2. Semiconducting materials

Indexed keywords

CARRIER MOBILITY; DEFECTS; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; LIGHT EMITTING DIODES; SEMICONDUCTING ORGANIC COMPOUNDS; X RAY ANALYSIS;

GROWTH FROM VAPOR; SEMICONDUCTING RUBRENE; X-RAY TOPOGRAPHY;

SINGLE CRYSTALS;

EID: 33646368413     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.01.056     Document Type: Article

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