Effect of growth temperature on the indium incorporation in ingan epitaxial films

Advanced Materials Research

Volumn 287-290, Issue , 2011, Pages 1456-1459

  Chang, P C ^a   Yu, C L ^b   Jahn, Y W ^b   Chang, S J ^b   Lee, K H ^c  

^a KUN SHAN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

InGaN; Metalorganic chemical vapor deposition (MOCVD)

Indexed keywords

EFFECT OF TEMPERATURE; FILM PROPERTIES; FILM QUALITY; INGAN; METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); PEAK EMISSIONS; XRD;

FILMS; GALLIUM; GALLIUM COMPOUNDS; GROWTH (MATERIALS); INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL FILMS;

EID: 79961219558     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/AMR.287-290.1456     Document Type: Conference Paper

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