Photocurrent gain in 4H-SiC interdigit Schottky UV detectors with a thermally grown oxide layer

Applied Physics Letters

Volumn 90, Issue 22, 2007, Pages

  Sciuto, A ^a   Roccaforte, F ^a   Di Franco, S ^a   Raineri, V ^a   Billotta, S ^b   Bonanno, G ^b  

^a CNR IMM   (Italy)

^b INAF OSSERVATORIO ASTROFISICO DI CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN MEASUREMENT; PHOTOCURRENTS; QUANTUM EFFICIENCY; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SURFACE POTENTIAL;

OXIDE LAYERS; SUPERFICIAL OXIDES; SURFACE POTENTIAL BARRIERS;

ULTRAVIOLET DETECTORS;

EID: 34249906711     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2745208     Document Type: Article

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