Electrical properties correlated with redistributed deep states in a-Si:H thin-film transistors on flexible substrates undergoing mechanical bending

Thin Solid Films

Volumn 528, Issue , 2013, Pages 82-85

  Lee, M H ^a   Hsieh, B F ^b   Chang, S T ^b  

^a NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Deep states; Flexible electronics; Mechanical strain

Indexed keywords

A-SI:H; DEEP STATES; ELECTRICAL CHARACTERISTIC; EXPONENTIAL DISTRIBUTIONS; FLEXIBLE SUBSTRATE; GAP STATE DENSITY; MECHANICAL BENDING; MECHANICAL STRAIN; SUBTHRESHOLD SWING; TRAP STATE; TRAPPED STATE;

FLEXIBLE ELECTRONICS; SILICON; THIN FILM TRANSISTORS;

ELECTRIC PROPERTIES;

EID: 84872947275     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.10.097     Document Type: Conference Paper

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