Defect creation kinetics in amorphous silicon thin film transistors

Journal of Non-Crystalline Solids

Volumn 299-302, Issue , 2002, Pages 492-496

  Wehrspohn, R B ^a   Deane, S C ^b   Powell, M J ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CRYSTAL DEFECTS; MATHEMATICAL MODELS; REACTION KINETICS; STRESS ANALYSIS; THIN FILM TRANSISTORS;

DEFECT CREATION;

AMORPHOUS SILICON;

EID: 0036539658     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)00959-0     Document Type: Article

References (12)