SCOPUS 정보 검색 플랫폼

Volumn 109, Issue 8, 2011, Pages

Metastability mechanisms in thin film transistors quantitatively resolved using post-stress relaxation of threshold voltage

(2) Fomani, Arash A a Nathan, Arokia b

a UNIVERSITY OF WATERLOO (Canada)

b UNIVERSITY COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BIAS STRESS; CHARGE DE-TRAPPING; CHARGE TRAPPING PROCESS; DEFECT STATE; GAP STATE; HYDROGENATED AMORPHOUS SILICON (A-SI:H); METASTABILITIES; NEW APPROACHES; SIN GATE DIELECTRICS;

AMORPHOUS FILMS; AMORPHOUS SILICON; BIAS VOLTAGE; CHARGE TRAPPING; GATE DIELECTRICS; GATES (TRANSISTOR); RESIDUAL STRESSES; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; STRESS RELAXATION; THIN FILMS; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 79955746467 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3569702 Document Type: Article

Times cited : (20)

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