Mechanical bending cycles of hydrogenated amorphous silicon layer on plastic substrate by plasma-enhanced chemical vapor deposition for use in flexible displays

Japanese Journal of Applied Physics

Volumn 48, Issue 2, 2009, Pages

  Lee, Min Hung ^a   Chang, Shu Tong ^b   Wu, Yi Chun ^b   Tang, Ming ^b   Lin, Chung Yi ^b  

^a NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CRYSTAL ATOMIC STRUCTURE; HYDROGENATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; RAMAN SPECTROSCOPY;

A-SI:H; AFM AND MICRO-RAMAN; ATOMIC-FORCE MICROSCOPIES; BENDING CYCLES; BOND STRUCTURES; ELECTRICAL CHARACTERISTICS; FLEXIBLE DISPLAYS; FLEXIBLE ELECTRONICS; HYDROGENATED AMORPHOUS SILICONS; HYDROGENATED AMORPHOUS SILICONS (ASI:H); MECHANICAL BENDING; MECHANICAL STRAINS; MICRO-RAMAN SPECTRUM; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITIONS; PLASTIC SUBSTRATES; SUB-THRESHOLD SWINGS; TRAP STATE;

AMORPHOUS SILICON;

EID: 60849095524     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.021301     Document Type: Article

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