Realistic quantum design of silicon quantum dot intermediate band solar cells

Nanotechnology

Volumn 24, Issue 26, 2013, Pages

  Hu, Weiguo ^a,b   Igarashi, Makoto ^a,b   Lee, Ming Yi ^c   Li, Yiming ^a,c   Samukawa, Seiji ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

INTERMEDIATE-BAND SOLAR CELLS; MINIBAND FORMATION; OPTICAL AND ELECTRICAL PROPERTIES; OPTIMAL DESIGN; QUANTUM DESIGNS; SILICON QUANTUM DOTS; TANDEM SOLAR CELLS; TOP-DOWN PROCESS;

BAND STRUCTURE; ELECTRONIC STRUCTURE; FINITE ELEMENT METHOD; SILICON; SOLAR CELLS; SUPERLATTICES; THREE DIMENSIONAL COMPUTER GRAPHICS;

ELECTRIC PROPERTIES;

EID: 84878711292     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/26/265401     Document Type: Article

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