Study of single silicon quantum dots' band gap and single-electron charging energies by room temperature scanning tunneling microscopy

Nano Letters

Volumn 8, Issue 6, 2008, Pages 1689-1694

  Zaknoon, Bashir ^a   Bahir, Gad ^a   Saguy, Cecile ^a   Edrei, Rachel ^a   Hoffman, Alon ^a   Rao, Rajesh A ^b   Muralidhar, Ramachandran ^b   Chang, Ko Min ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BARRIER HEIGHTS; DOT DIAMETERS; DOT SIZES; ENERGY LEVELS; MODEL CALCULATIONS; ROOM TEMPERATURES; SCANNING TUNNELING SPECTROSCOPIES; SI QUANTUM DOTS; SILICON QUANTUM DOTS; SINGLE-ELECTRON CHARGING; SIZE DEPENDENCES; THEORETICAL CALCULATIONS; TUNNELING SPECTROSCOPIES;

ENERGY GAP; SCANNING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SPECTRUM ANALYSIS;

SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT; SILICON;

ARTICLE; CHEMISTRY; ELECTRON; ELECTRON TRANSPORT; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SCANNING TUNNELING MICROSCOPY; TEMPERATURE;

ELECTRON TRANSPORT; ELECTRONS; MATERIALS TESTING; MICROSCOPY, SCANNING TUNNELING; PARTICLE SIZE; QUANTUM DOTS; SILICON; TEMPERATURE;

EID: 48449092115     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl080625b     Document Type: Article

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