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Volumn 109, Issue 7, 2011, Pages

Miniband structure and photon absorption in regimented quantum dot systems

Author keywords

[No Author keywords available]

Indexed keywords

BULK CONDUCTION BANDS; CONDUCTION BAND OFFSET; DOT DENSITY; DOT SIZE; ELECTRON STATE; GAAS; INAS QUANTUM DOTS; MATERIAL PROPERTY; MINIBAND STRUCTURES; PERIODIC NANOSTRUCTURE; PHOTON ABSORPTIONS; QUANTUM DOT; TECHNOLOGICAL APPLICATIONS;

EID: 79955365062     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3562160     Document Type: Conference Paper
Times cited : (10)

References (23)
  • 2
    • 33745238953 scopus 로고    scopus 로고
    • Silicon quantum dot superlattices: Modeling of energy bands, densities of states, and mobilities for silicon tandem solar cell applications
    • DOI 10.1063/1.2203394
    • C. W. Jiang and M. A. Green, J. Appl. Phys. 99, 114902 (2006). 10.1063/1.2203394 (Pubitemid 43926551)
    • (2006) Journal of Applied Physics , vol.99 , Issue.11 , pp. 114902
    • Jiang, C.-W.1    Green, M.A.2
  • 9
    • 76949087987 scopus 로고    scopus 로고
    • 10.1016/j.physe.2009.10.033
    • V. M. Fomin and P. Kratzer, Physica E 42, 906 (2010). 10.1016/j.physe.2009.10.033
    • (2010) Physica e , vol.42 , pp. 906
    • Fomin, V.M.1    Kratzer, P.2
  • 14
    • 79955406194 scopus 로고    scopus 로고
    • Ph. D. Thesis, University of Valencia, Spain
    • J. M. Llorens, Ph. D. Thesis, University of Valencia, Spain, 2007.
    • (2007)
    • Llorens, J.M.1
  • 15
  • 16
    • 33847746658 scopus 로고    scopus 로고
    • Efficient simulation of silicon nanowire field effect transistors and their scaling behavior
    • DOI 10.1063/1.2430786
    • M. Shin, J. Appl. Phys. 101, 024510 (2007). 10.1063/1.2430786 (Pubitemid 46372864)
    • (2007) Journal of Applied Physics , vol.101 , Issue.2 , pp. 024510
    • Shin, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.