Control of optical bandgap energy and optical absorption coefficient by geometric parameters in sub-10nm silicon-nanodisc array structure

Nanotechnology

Volumn 23, Issue 6, 2012, Pages

  Budiman, Mohd Fairuz ^a,b   Hu, Weiguo ^a,b   Igarashi, Makoto ^a,b   Tsukamoto, Rikako ^a,b   Isoda, Taiga ^b,c   Itoh, Kohei M ^b,c   Yamashita, Ichiro ^b,d   Murayama, Akihiro ^b,e   Okada, Yoshitaka ^b,f   Samukawa, Seiji ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c KEIO UNIVERSITY   (Japan)

^d PANASONIC CORPORATION   (Japan)

^e HOKKAIDO UNIVERSITY   (Japan)

^f UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

2D ARRAYS; ABSORPTION COEFFICIENTS; ARRAY STRUCTURES; DAMAGE-FREE; ETCHING MASKS; GEOMETRIC PARAMETER; HIGH-DENSITY; MATRIX; OPTICAL ABSORPTION COEFFICIENTS; OPTICAL BAND GAP ENERGY; SI QUANTUM DOT; TOP-DOWN PROCESS; TUNABILITIES;

ENERGY GAP; ETCHING; IRON OXIDES; LIGHT ABSORPTION; OPTICAL BAND GAPS; SHRINKAGE; SILICON COMPOUNDS; SILICON OXIDES; SOLAR ENERGY;

SILICON;

EID: 84855921208     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/6/065302     Document Type: Article

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