Grain structure effect on electromigration reliability of Cu interconnects with CoWP capping

Journal of Materials Research

Volumn 26, Issue 21, 2011, Pages 2757-2760

  Zhang, Lijuan ^a   Ho, Paul S ^a   Aubel, Oliver ^b   Hennesthal, Christian ^b   Zschech, Ehrenfried ^c  

^a The University of Texas at Austin   (United States)

^b GLOBALFOUNDRIES   (Germany)

^c FRAUNHOFER INSTITUTE FOR NON DESTRUCTIVE TESTING   (Germany)

Author keywords

Electromigration; Grain size

Indexed keywords

ELECTROMIGRATION RELIABILITY; FAILURE STATISTICS; FLUX DIVERGENCES; GRAIN SIZE; LIFETIME IMPROVEMENT; STATISTICAL DEVIATIONS; STATISTICAL DISTRIBUTION; STRUCTURE EFFECT;

COBALT COMPOUNDS; CRYSTAL MICROSTRUCTURE; ELECTROMIGRATION; GRAIN BOUNDARIES;

GRAIN SIZE AND SHAPE;

EID: 84878378598     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2011.321     Document Type: Article

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