Electromigration-resistance enhancement with CoWP or CuMn for advanced Cu interconnects

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Christiansen, Cathryn ^a   Li, Baozhen ^a   Angyal, Matthew ^a   Kane, Terence ^a   McGahay, Vincent ^a   Wang, Yun Yu ^a   Yao, Shaoning ^a  

^a IBM   (United States)

Author keywords

CoWP; CuMn; electromigration; line; via

Indexed keywords

COWP; CU DIFFUSION; CU SURFACES; CU-INTERCONNECTS; CUMN; ELECTROMIGRATION RESISTANCE; LINE; PROCESS DEFECTS; SEED LAYER; THIN LAYERS; VIA;

ACTIVATION ENERGY; DEFECTS; DEPOSITION; DIFFUSION; ELECTROMIGRATION; GRAIN BOUNDARIES; MANGANESE; SURFACE DEFECTS; SURFACE SEGREGATION;

COBALT COMPOUNDS;

EID: 79959308467     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784493     Document Type: Conference Paper

References (5)

1. C.-K Hu, et al, "Effect of overlayers on electromigration reliability improvement for Cu Low-k interconnects,", IEEE Inter. Rel. Phys. Symp (IRPS), 2004, pp. 222-228
2. T. Nogami, et al, "High reliability 32nm Cu/ULK BEOL based on PVD CuMn seed and its extendibility", IEDM 2010, 33.5.1-33.5.
3. M. Iguchi, et al, "Optimization of metallization process for 32nm node highly reliable ultralow-k (k=2.4)/Cu multilevel interconnects incorporating a bilayer low barrier cap (k=3.9); IEDM 2009, 36.1.1-36.1.4
4. S. C. Pan, et al "Interface effect on Mn-containing self-formed barrier formation with extreme low-k dielectric integration," IEEE Intern. Interconnect Tech. Conf (IITC) 2010, 3.3
5. Zhang, L., et al, "Effects of cap layer and grain structure on electromigration reliability of Cu/low-k interconnects for 45 nm technology node", IEEE Inter. Rel. Phys. Symp (IRPS), 2010, pp. 581-585