Electron scattering study within the depletion region of the GaN(0001) and the GaAs(100) surface

Applied Physics Letters

Volumn 85, Issue 9, 2004, Pages 1541-1543

  Liu, Zhi ^a   Machuca, Francisco ^a   Pianetta, Piero ^a   Spicer, William E ^a   Pease, R F W ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING REGIONS (BBR); ENERGY DISTRIBUTION CURVES (EDC); NEGATIVE ELECTRON AFFINITY (NEA); PHONON SCATTERING; PHOTOELECTRONS;

CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; ELECTRON MOBILITY; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; ENERGY DISSIPATION; KINETIC ENERGY; LIGHT ABSORPTION; PHONONS; PHOTOCURRENTS; PHOTOEMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

GALLIUM NITRIDE;

EID: 4944264304     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1785865     Document Type: Article

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