Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric

Applied Physics Letters

Volumn 102, Issue 17, 2013, Pages

  Kozen, Alexander C ^a   Schroeder, Marshall A ^a   Osborn, Kevin D ^b   Lobb, C J ^c   Rubloff, Gary W ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b LABORATORY FOR PHYSICAL SCIENCES   (United States)

^c Bldg 142   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; ELECTRICAL PERFORMANCE; ELECTRONIC DEVICE; HYDROGEN DEFECTS; IN-SITU FABRICATION; METAL INSULATOR METALS; OXIDATION CONDITIONS; POOR PERFORMANCE;

ALUMINUM; ATOMIC LAYER DEPOSITION; DEFECTS; DEPOSITS; DEUTERIUM; DIELECTRIC MATERIALS; MIM DEVICES; SEMICONDUCTOR DOPING;

HYDROGEN;

EID: 84877309168     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4801979     Document Type: Article

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