Thermal effects on 1 H and 2 H distributions determined by SIMS in atomic layer deposition of HfO 2 and Al 2 O 3 using heavy water

Applied Surface Science

Volumn 252, Issue 19, 2006, Pages 7194-7197

  Holliger, P ^a   Hobbs, C ^b   Jalabert, D ^c   Martin, F ^a   Pierre, F ^a   Reimbold, G ^a   Rivallin, P ^a  

^a CEA LETI   (France)

^b Freescale   (France)

^c CEA GRENOBLE   (France)

Author keywords

Depth profiling; Deuterium; High k material; Hydrogen; Interface; SIMS

Indexed keywords

ALUMINA; CMOS INTEGRATED CIRCUITS; DEFECTS; DIELECTRIC MATERIALS; HEAVY WATER; SECONDARY ION MASS SPECTROMETRY;

DEPTH PROFILING; HIGH-K MATERIAL; INTERFACE;

HAFNIUM COMPOUNDS;

EID: 33747186437     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.111     Document Type: Article

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