Hydrogen incorporation induced metal-semiconductor transition in ZnO:H thin films sputtered at room temperature

Applied Physics Letters

Volumn 102, Issue 17, 2013, Pages

  Singh, Anil ^a   Chaudhary, Sujeet ^a   Pandya, D K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

GLASS SUBSTRATES; HIGH CONDUCTIVITY; HYDROGEN FORMS; HYDROGEN INCORPORATION; METAL-SEMICONDUCTOR TRANSITIONS; ROOM TEMPERATURE; SHALLOW DONORS; THIN FILMS-SPUTTERED;

ACTIVATION ENERGY; CARRIER CONCENTRATION; DEPOSITS; SUBSTRATES; THIN FILMS; ZINC OXIDE;

HYDROGEN;

EID: 84877306343     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4803667     Document Type: Article

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